t1m5f-a series maximum ratings (tj= 25 unless otherwise noticed) features one-piece, injection-molded package blocking voltage to 600 volts sensitive gate triggering in four trigger modes (quadrants) for all possible combinations of trigge r sources, and especially for circuits that source ga te drives all diffused and glassivated junctions for maximum uniformity of parameters and reliability improved noise immunity (dv/dt minimum of 20 v/msec at 110 ) high surge current of 10 amps pb-free package sensitive gate triacs sillicon bidirectional thyristors triacs 1.0 amperes rms 400 thru 600 volts rating symbol value unit peak repetitive offC state voltage ( t j = -40 to 125 , sine wave, 50 to 60 hz; gate open) v drm , v rrm 400 600 volts on-state rms current full cycle sine wave 50 to 60 hz ( t c = 50 ) i t(rms) 1.0 amp peak non-repetitive surge current full cycle sine wave 60 hz (tj =25 ) i tsm 10.0 amps circuit fusing consideration (t = 8.3 ms) i t 0.40 a s peak gate power ( t 2.0us ,tc = 80 Q ) p gm 5.0 watt average gate power ( tc = 80 , t 8.3 ms ) Q p g(av) 0.1 watt peak gate current ( t 2.0us ,tc = 80 Q ) i gm 1.0 amp peak gate voltage ( t 2.0us ,tc = 80 Q ) v gm 5.0 volts operating junction temperature range t j -40 to +110 storage temperature range tstg -40 to +150 2 2 rev. 5, oct-2010, ktxd11 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a con stant current source such that the voltage ratings of the devices are exce eded. to-92 (to-226aa) semiconductor lite-on t1m5f400a T1M5F600A 12 3 pin assignment main terminal 1 main terminal 2 gate all dimensions in millimeter to-92 dim. min. max. a c d e f g b 4.45 4.70 5.33 4.32 3.18 4.19 1.39 1.15 2.42 2.66 12.7 ------ 2.04 2.66 3.43 i -----
rating and characteristic curves t1m5f-a series characteristic symbol value unit thermal resistance - junction to lead - junction to cas e - junction to amb ient rthjl rthjc rthja 60 75 150 / w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (vd=rated vdrm and vrrm; gate open) t j =110 i drm i rrm ---- ---- ---- ---- 10 100 ua ua peak forward on-state voltage (i tm= 1a peak @tp 2.0 ms, duty cycle 2%) Q Q v tm ---- ---- 1.9 volts gate trigger current (v d = 12 vdc; r l = 100 ohms) i gt1 i gt2 i gt3 i gt4 ---- ---- ---- ---- ---- ---- ---- ---- 5.0 5.0 5.0 7.0 ma holding current (v d = 12 v, initiating current = 200 ma, gate open) i h ---- 1.5 10 ma turn-on time (v d = rated vdrm , i tm = 1.0 a pk, i g = 25 ma) tgt ---- 2 ---- us gate trigger voltage (v d = 12 vdc; r l =100 ohms) v gt1 v gt2 v gt3 v gt4 ---- ---- ---- ---- 0.66 0.77 0.84 0.88 2.0 2.0 2.0 2.5 volts latching current (v d =12v,i g = 10 ma) i l1 i l2 i l3 i l4 ---- ---- ---- ---- 1.6 10.5 1.5 2.5 15 20 15 15 ma gate non-trigger voltage (v d = 12v, r l = 100 ohms , t j =110 ) v gd 0.1 ---- ---- volts critical rate of rise of off-state voltage (v d =rated v drm ,exponential waveform, gate open, t j =110 ) dv/dt 20 60 ---- v/us thermal characteristics electrical characteristics (t c =25 unless otherwise noted) off characteristics on characteristics dynamic characteristics
rating and characteristic curves t1m5f-a series 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it(rms),rms on-state current (amps) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 p(av), power pissipation (watts) figure 3. power dissipation 0 25 50 75 100 125 ta, ambient temperature( ) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 it(rms), rms on-state current(amps) figure 1. rms current deratiing versus ambient temperature 0 25 50 75 100 125 tc, case temperature( ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 it(rms), rms on-state current(amps) figure 2. rms current deratiing versus case temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 vtm, instantaneous on-state voltage (volts) 0.01 0.1 1 10 itm, instantaneous on-state current (amp) figure 4. on-state characteristics tpy. max.
1.00e-1 1.00e+0 1.00e+1 1.00e+2 1.00e+3 1.00e+4 t, time (ms) 0.01 0.1 1 r(t), transent thermal resistance (normalized) figure 5. transient thermal response rating and characteristic curves t1m5f-a series -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 itsm, peak surge current (amps) figure 8. typical gate trigger voltage versus junction temperature q1 q4 q2 q3 -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1.0 10.0 100.0 itsm, peak surge current (amps) figure 7. typical gate trigger current versus junction temperature q1 q4 q2 q3 -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1 10 ih, holding current (ma) figure 10. typical holding current versus junction temperature mt2 positive -50 -25 0 25 50 75 100 125 00000000000000000000 tj, junction temperature ( ) 0.1 1 10 100 il, latching current (ma) figure 9. typical latching current versus junction temperature q1 q4 q2 q3 mt2 negative 1 10 100 number of cycles 0 4 8 12 16 itsm, peak surge current (amps) figure 6. maximum allowable surge current t j =25 f= 60hz cycle
legal disclaimer notice t1m5f-a series lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. custome rs should obtain and confirm the latest product information and specifications b efore final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does l sc assume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purcha sed or used for any unintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc. important notice and disclaimer
|
